| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device wherein the variation in wiring thickness is suppressed. SOLUTION: This manufacturing method of the semiconductor device comprises the steps of successively forming an interlayer insulating film 13 and a cap insulating film 14 on an etching stopper film 12, forming a first hard mask 15 having a pattern for a connecting hole 18 formed therein on the cap insulating film 14, forming the connecting hole 18 extending to the etching stopper film 12 by etching the cap insulating film 14 and the interlayer insulating film 13, forming a second hard mask 53 having a pattern for a wiring groove formed therein by removing a part of the first hard mask 15, forming the wiring groove by etching the cap insulating film 14 and the interlayer insulating film 13, and forming an opening in the part of the etching stopper film 12 located under the connecting hole 18. The hard mask consists of a material having etching selectivity with respect to the interlayer insulating film 13 and the cap insulating film 12. COPYRIGHT: (C)2007,JPO&INPIT
|
