| 摘要 |
Disclosed herein is a device for cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.
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