スルーシリコンビア（ＴＳＶ）内にチップ−チップ間、チップ−ウェハー間及びウェハー−ウェハー間の銅インターコネクトを電着するプロセス

摘要

A process of electrodepositing high purity copper in a via in a silicon substrate to form a through-silicon-via (TSV), including immersing the silicon substrate into an electrolytic bath in an electrolytic copper plating system in which the electrolytic bath includes an acid, a source of copper ions, a source of ferrous and/or ferric ions, and at least one additive for controlling physical-mechanical properties of deposited copper; and applying an electrical voltage for a time sufficient to electrodeposit high purity copper to form a TSV, in which a Fe+2/Fe+3 redox system is established in the bath to provide additional copper ions to be electrodeposited by dissolving copper ions from a source of copper metal.