发明名称 |
CHEMICAL MECHANICAL POLISHING PROCESS FOR FORMING SHALLOW TRENCH ISOLATION STRUCTURE |
摘要 |
A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the substrate, an oxide layer formed over the substrate, filling the trenches, wherein a width of the trenches in the dense region is smaller than that in the isolation region. A first polishing step is performed to remove a portion of the silicon oxide layer until a thickness of the remaining portion of the oxide layer reaches a predetermined thickness. A second polishing step is performed to remove a portion of the remaining portion of the silicon oxide layer until the silicon nitride layer is exposed.
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申请公布号 |
US2008029478(A1) |
申请公布日期 |
2008.02.07 |
申请号 |
US20070863665 |
申请日期 |
2007.09.28 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HSU CHIA-JUNG;YU ART;LU HSIAO-LING;TSAI TENG-CHUN |
分类号 |
B44C1/22;H01L21/302;H01L21/3105;H01L21/461;H01L21/762 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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