发明名称 Photomask evaluation method and manufacturing method of semiconductor device
摘要 A photomask evaluation method includes applying energy waves to a photomask having a to-be-measured pattern, detecting a response wave from the photomask, acquiring an edge profile of the to-be-measured pattern based on the response wave, acquiring dimension of that portion of the to-be-measured pattern which lies in a preset area, based on the edge profile, subjecting that portion of the edge profile which lies in the preset area to frequency analysis to acquire intensity distribution of frequency components, and extracting a portion with a frequency lower than a preset frequency from the intensity distribution.
申请公布号 US2008049225(A1) 申请公布日期 2008.02.28
申请号 US20070826133 申请日期 2007.07.12
申请人 SAITO MASATO 发明人 SAITO MASATO
分类号 G01B11/00;G03F1/84;H01L21/027 主分类号 G01B11/00
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