发明名称 HIGH FREQUENCY PLASMA CVD DEVICE, HIGH FREQUENCY PLASMA CVD METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR THIN FILM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a large-area and uniform VHF plasma CVD device and a method thereof which suppress the effect of standing waves and the occurrence of harmful plasma generated other than between a pair of electrodes and also suppresses consumption of a supplied power other than between the pair of electrodes, relating to a plasma generation source constituting the VHF plasma CVD device for manufacturing a tandem type thin film silicon solar cell. <P>SOLUTION: In the plasma CVD device and the method thereof, the distance between first and second power feeding points arranged in positions facing each other of both electrode ends is set to an odd multiple of a quarter of the wavelength of use power. Two temporally separated pulse power is supplied from both electrode ends through a balance-unbalance transformer, so that a first standing wave of which the anti-node is located in an electrode center and a second standing wave of which the node is located in the electrode center are generated temporally alternately. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009021634(A) 申请公布日期 2009.01.29
申请号 JP20080263567 申请日期 2008.10.10
申请人 MURATA MASAYOSHI 发明人 MURATA MASAYOSHI
分类号 H01L21/205;C23C16/24;C23C16/505;C23C16/52;H01L31/04 主分类号 H01L21/205
代理机构 代理人
主权项
地址