发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To efficiently provide a semiconductor device that has a microcrystal semiconductor with uniform behavior, and also to provide a high-quality electronic device. SOLUTION: Semiconductor layers are formed onto a substrate having an insulating surface, and a pulse laser beam with light intensity strong enough for a semiconductor layer to be completely melted is irradiated, thereby forming a microcrystal semiconductor region. This will enable a semiconductor device to be manufactured which has a microcrystal semiconductor region with uniform behavior, and by using it, a high-quality electronic device is provided. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009049143(A) 申请公布日期 2009.03.05
申请号 JP20070213081 申请日期 2007.08.17
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SHIMOMURA AKIHISA;SHOJI HIRONOBU
分类号 H01L21/20;G02F1/1368;H01L21/336;H01L29/786 主分类号 H01L21/20
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