发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To efficiently provide a semiconductor device that has a microcrystal semiconductor with uniform behavior, and also to provide a high-quality electronic device. SOLUTION: Semiconductor layers are formed onto a substrate having an insulating surface, and a pulse laser beam with light intensity strong enough for a semiconductor layer to be completely melted is irradiated, thereby forming a microcrystal semiconductor region. This will enable a semiconductor device to be manufactured which has a microcrystal semiconductor region with uniform behavior, and by using it, a high-quality electronic device is provided. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009049143(A) |
申请公布日期 |
2009.03.05 |
申请号 |
JP20070213081 |
申请日期 |
2007.08.17 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
SHIMOMURA AKIHISA;SHOJI HIRONOBU |
分类号 |
H01L21/20;G02F1/1368;H01L21/336;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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地址 |
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