Backside Through Vias in a Bonded Structure

摘要

A wafer thinning system and method are disclosed that includes grinding away substrate material from a backside of a semiconductor device. A current change is detected in a grinding device responsive to exposure of a first set of device structures through the substrate material, where the grinding is stopped in response to the detected current change. Polishing repairs the surface and continues to remove an additional amount of the substrate material. Exposure of one or more additional sets of device structures through the substrate material is monitored to determine the additional amount of substrate material to remove, where the additional sets of device structures are located in the semiconductor device at a known depth different than the first set.

主权项

1. A device comprising:
a first substrate having a plurality of first metallization layers disposed thereon; a second substrate bonded to the first substrate, the second substrate having a plurality of second metallization layers; and a plurality of conductive plugs extending from a surface of the first substrate, the plurality of conductive plugs comprising a first conductive plug and a second conductive plug, the first conductive plug having a first width and a first depth, the second conductive plug having a second width and a second depth, the first width being greater than the second width, the first depth being greater than the second depth.