HORIZONTAL POWER LED DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A method of manufacturing a horizontal power LED device includes constructing a light-emitting structure on a substrate, etching the light-emitting structure, fabricating an electrode, forming an insulating film, forming a metal substrate, removing the substrate from the light-emitting structure, and forming an n-pad. A high-power and high-efficiency horizontal LED device is manufactured by the method of manufacturing the same.

主权项

1. A method of manufacturing a horizontal power LED device, the method comprising:
constructing a light-emitting structure on a substrate, the light-emitting structure being a laminated structure in which an N-type gallium nitride semiconductor layer (n-GaN layer), an active layer and a P-type gallium nitride semiconductor layer (p-GaN layer) are sequentially disposed; etching the light-emitting structure to expose the n-GaN layer and the substrate so as to form a separation part having a size corresponding to a predetermined chip size; fabricating an electrode by forming a P-type electrode on the p-GaN layer and by forming an N-type electrode on an exposed region of n-GaN layer; forming an insulating film by depositing an insulation material to cover the p-GaN layer and the exposed n-GaN layer, and then by etching the deposited insulation material to expose a P-type electrode formed on the p-GaN layer; forming a metal substrate to cover the insulation film and the P-type electrode; removing the substrate from the light-emitting structure; and forming an n-pad by forming a through-hole in the n-GaN layer at a margin region, extending from the upper surface of the n-GaN layer to the N-type electrode, and by depositing the n-pad in such a manner that the n-pad communicates with the N-type electrode via the through-hole.