SEMICONDUCTOR MEMORY

摘要

A semiconductor memory includes a memory cell including a resistance change element and a control circuit configured to perform OFF-write processing of applying an OFF-write pulse to the memory cell for switching the state of the memory cell to a high-resistive state where a resistance value of the resistance change element is at least a first reference value and ON-write processing of applying an ON-write pulse to the memory cell for switching the state of the memory cell to a low-resistive state where the resistance value is less than a second reference value. The control circuit performs the OFF-write processing by applying an auxiliary pulse which is smaller than the OFF-write pulse in voltage amplitude to the memory cell one or more time(s) after having applied the OFF-write pulse to the memory cell.

主权项

1. A semiconductor memory, comprising:
a memory cell which includes a resistance change element and a selection transistor configured to control whether a potential difference between a bit line and a plate line is to be applied to the resistance change element or to be blocked; and a control circuit configured to perform a first write processing of applying a first write pulse to the memory cell in order to switch a state of the memory cell to a first resistive state where a resistance value of the resistance change element is at least a first reference value and a second write processing of applying a second write pulse to the memory cell in order to switch the state of the memory cell to a second resistive state where the resistance value of the resistance change element is less than a second reference value, wherein the control circuit performs the first write processing by applying a first auxiliary pulse, which is smaller than the first write pulse in voltage amplitude, one or more time(s) after having applied the first write pulse to the memory cell.