| 主权项 |
1. A memory device, comprising:
a controller; a first electrode and a second electrode connected to the controller; and a variable resistance layer provided between the first electrode and the second electrode, the variable resistance layer including a chalcogenide compound including a grain boundary, the variable resistance layer having
a first structure, anda second structure, a structure of the grain boundary of the second structure being different from a structure of the grain boundary of the first structure, the controller configured to be able to perform
a first operation of applying a first voltage between the first electrode and the second electrode,a second operation of applying a second voltage between the first electrode and the second electrode and determining whether or not the variable resistance layer has the first structure, the second voltage being lower than the first voltage, anda third operation of applying a third voltage between the first electrode and the second electrode having the interposed variable resistance layer determined to have the first structure in the second operation, the third voltage being higher than the first voltage and the second voltage. |
