SEMICONDUCTOR MEMORY DEVICE

摘要

A memory bank of a semiconductor memory device includes: a plurality of memory cells; first and second local bit lines; a differential amplifier configured to amplify a potential difference between the first and second local bit lines; a connector to which a global data line is connected; a first output circuit configured to selectively output, according to a potential level of the first local bit line, a first potential to the connector; and a second output circuit configured to selectively prevent, according to a potential level of the second local bit line, a potential of the connector from being affected by an output of the first output circuit and being equal to the first potential.

主权项

1. A semiconductor memory device comprising:
a plurality of memory banks; and a single global data line provided for the plurality of memory banks, wherein each of the plurality of memory banks includes:
a plurality of memory cells;first and second local bit lines forming a pair of local bit lines, to which the plurality of memory cells are connected and through which data is read from the plurality of memory cells;a differential amplifier configured to amplify a potential difference between the first and second local bit lines;a connector to which the global data line is connected;a first output circuit configured to selectively output, according to a potential level of the first local bit line, a first potential to the connector; anda second output circuit configured to selectively prevent, according to a potential level of the second local bit line, a potential of the connector from being affected by an output of the first output circuit and being equal to the first potential.