| 发明名称 |
MAGNETIC DOMAIN WALL MOTION MEMORY DEVICE |
| 摘要 |
A memory device according to one embodiment includes a magnetic wire; a conductive first line which faces one of opposite ends of the magnetic wire at a distance; and a conductive second line which faces the other of the opposite ends of the magnetic wire at a distance. A voltage applied to the first line is changed in a positive direction and a second voltage applied to the second line is changed in a negative direction to form a potential difference in the magnetic wire. |
| 申请公布号 |
US2016267955(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201514818512 |
申请日期 |
2015.08.05 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
IWATA Yoshihisa |
| 分类号 |
G11C11/04 |
主分类号 |
G11C11/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device comprising:
a magnetic wire; a conductive first line which faces one of opposite ends of the magnetic wire at a distance; and a conductive second line which faces the other of the opposite ends of the magnetic wire at a distance, wherein a voltage applied to the first line is changed in a positive direction and a second voltage applied to the second line is changed in a negative direction to form a potential difference in the magnetic wire. |
| 地址 |
Tokyo JP |
