TRANSISTOR AND ELECTRONIC DEVICE

摘要

A semiconductor device with favorable electrical characteristics or a highly reliable semiconductor device is provided. The semiconductor device is a transistor including a first oxide film. The first oxide film contains indium, an element M, and zinc. The first oxide film includes a region in which the atomic ratio of indium to the element M and zinc satisfies indium : element M:zinc = xb:yb:zb For xb:yb:zb, (1 - α1):(1 +α1):m1 or (1 -α2):(1 +α2):m2 is satisfied, where α1 is greater than or equal to -0.43 and less than or equal to 0.18, α2 is greater than or equal to -0.78 and less than or equal to 0.42, and m1 and m2 are each greater than 0.7 and less than or equal to 1.