发明名称 NANOSTRUCTURED COPPER-SELENIDE (CU2SE) WITH HIGH THERMOELECTRIC FIGURE-OF-MERIT AND PROCESS FOR THE PREPARATION THEREOF
摘要 Present invention provides nanostructured p-type copper-selenide (CuzSe) as a costeffective thermoelectric material with a high thermoelectric figure-of-merit. The nanostructured Cu2Se claimed in this invention is a cost-effective p-type thermoelectric material having a high figure-of-merit of 2 at 973 K and is synthesized employing high energy ball milling process followed by reaction sintering under pressure at high heating rates using spark plasma sintering of the resulting nanopowders. The sintered Cu2Se shows a density of 99.9% of theoretical density and retains the nanoscale features introduced during ball milling leading to a thermoelectric figure of merit of 2 at 973 K.
申请公布号 IN2693DE2013(A) 申请公布日期 2015.07.10
申请号 IN2013DEL2693 申请日期 2013.09.12
申请人 COUNCIL OF SCIENTIFIC & INDUSTRIAL RESEARCH 发明人 GAHTORI BHASKER;BATHULA SIVAIAH;TYAGI KRITI;SRIVASTAVA AVANISH KUMAR;DHAR AJAY;BUDHANI RAMESH CHANDRA
分类号 H01L 主分类号 H01L
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