发明名称 Anodic Bonding of Dielectric Substrates
摘要 A first ion rich dielectric substrate with a patterned dielectric barrier and a oxidizable metal layer is anodically bonded to a second ion rich dielectric substrate. To bond the substrates, the oxidizable metal layer is oxidized. The dielectric barrier may inhibit the migration of these ions to the bondline, which might otherwise poison the bond strength. Accordingly, when joining the two substrates, a strong bond is maintained between the wafers.
申请公布号 US2016304335(A1) 申请公布日期 2016.10.20
申请号 US201615098353 申请日期 2016.04.14
申请人 Innovative Micro Technology 发明人 ZEYEN Benedikt
分类号 B81B7/00;B81C1/00 主分类号 B81B7/00
代理机构 代理人
主权项 1. A microfabricated device, comprising: a first and a second ion rich dielectric substrate; a dielectric barrier that inhibits the flow of ions and is disposed adjacent to at least one of the first and the second substrate; an oxidizable metal layer disposed over the dielectric barrier; a metal oxide layer formed from the ion rich substrate and the oxidizable metal layer, wherein the metal oxide layer bonds the two ion rich layers together.
地址 Goleta CA US