发明名称 |
Verfahren zur Herstellung einer dielektrischen Reflexionsmaske |
摘要 |
<p>Production of a dielectric reflection mask comprises arranging an absorber layer between the substrate and the layer system before radiating with a laser beam. Preferred Features: The absorber layer is applied to the substrate before applying the layer system. The substrate is made from quartz glass, sapphire, crystalline quartz, magnesium fluoride, calcium fluoride, barium fluoride or mixed fluorides. The layer system consists of a number of Al2O3/SiO2 layer pairs or high and low breaking fluoride pairs. The absorber layer is made from HfO2, Ta2O5, Nb2O5, CeO2 or TiO2.</p> |
申请公布号 |
DE10017614(B4) |
申请公布日期 |
2005.02.24 |
申请号 |
DE2000117614 |
申请日期 |
2000.03.31 |
申请人 |
LASER-LABORATORIUM GOETTINGEN EV |
发明人 |
RUBAHN, KATHARINA;IHLEMANN, JUERGEN;THIELSCH, ROLAND |
分类号 |
B23K26/066;B23K26/18;C03C17/34;C03C23/00;G02B5/22;G02B5/28;(IPC1-7):B23K26/067;G02B5/00 |
主分类号 |
B23K26/066 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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