| 摘要 |
A high-performance piezoelectric device comprising an aluminum nitride thin film ultrahighly oriented along the c axis and free of hillock, crack, and separation by forming a lower electrode of a W layer on an inexpensive substrate such as a glass substrate without providing any adherent layer between them. The piezoelectric device free of hillock, crack, and separation and having a multilayer structure in which a lower electrode, a piezoelectric thin film, and an upper electrode are formed over a substrate is characterized in that the lower electrode is formed of an oriented W layer the (111)-plane of W of which is parallel to the substrate, and the piezoelectric thin film is an aluminum nitride thin film having a rocking curve half width (RCFWHM) of 2.5{ or less and oriented along the c axis. |
