FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to prevent a leakage current from being generated by a dangling bond by forming a thermal oxide layer in a trench to cure the damaged surface of a semiconductor substrate in the trench and by implanting hydrogen ions into the thermal oxide layer. A sacrificial layer pattern for exposing a field region on a semiconductor substrate(301) is formed. A predetermined depth of the filed region of the semiconductor substrate is etched to form a trench(304) by using the sacrificial layer pattern as an etch mask. A thermal oxide layer(305) is formed on the semiconductor substrate in the trench. An ion implantation process is performed on the front surface of the semiconductor substrate including the thermal oxide layer.