| 摘要 |
<p>A transistor is provided to reduce fabricating cost of a transistor and a display using the transistor by enabling formation of an offset structure without using a mask. Two polycrystalline silicon layers(10a) are disposed in parallel with each other, having doped high-conductive regions at their both ends and a channel region between the two high-conductive regions. A gate(12) is extended in a direction crossing the two polycrystalline silicon layers. A gate insulation layer is interposed between the gate and the polycrystalline silicon layers. Low-conductive regions(10e) are formed between the channel region of polycrystalline silicon and the high-conductive region, confronting each other and adjoining the edge of one side of the gate. Impurities having a low density can be doped into the low-conductive region as compared with the high-conductive region.</p> |
