发明名称 |
Trench type MOSgated device with strained layer on trench sidewall |
摘要 |
A MOSgated trench device has a reduced on resistance by forming a less than about a 13 nm thick strained SiGe layer on the silicon surface of the trenches and forming a thin (30 nm or less) layer of epitaxially deposited silicon on the SiGe layer which epi layer is converted to a gate oxide layer. The conduction channel formed by the SiGe layer is permanently strained to increase its mobility particularly hole mobility.
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申请公布号 |
US2007218615(A1) |
申请公布日期 |
2007.09.20 |
申请号 |
US20070804184 |
申请日期 |
2007.05.17 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
JONES DAVID P.;HAASE ROBERT P. |
分类号 |
H01L21/336;H01L29/78;H01L21/331;H01L21/335;H01L29/06;H01L29/12;H01L29/165;H01L29/417;H01L29/739;H01L29/778 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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