LDMOS FinFET device using a long channel region and method of manufacture

摘要

A FinFET includes a semiconductor fin supporting a first transistor and a second transistor. A first transistor gate electrode extends over a first channel region of the fin and a second transistor gate electrode extends over a second channel region of the fin. Epitaxial growth material on a top of the fin forms a raised source region on a first side of the first transistor gate electrode, an intermediate region between a second side of the first transistor gate electrode and a first side of the second transistor gate electrode, and a raised drain region on a second side of the second transistor gate electrode. The first and second transistor gate electrodes are short circuit connected to each other, with the first transistor configured to have a first threshold voltage and the second transistor configured to have a second threshold voltage different from the first threshold voltage.

主权项

1. An integrated FinFET transistor circuit, comprising:
a fin of semiconductor material supporting a first transistor and a second transistor; a first transistor gate electrode extending over a first channel region of said fin; a second transistor gate electrode extending over a second channel region of said fin; a raised source region of epitaxial growth material extending from a top of said fin on a first side of the first transistor gate electrode; a raised intermediate region of said epitaxial growth material extending from a top of said fin between a second side of the first transistor gate electrode and a first side of the second transistor gate electrode; a raised drain region of said epitaxial growth material extending from a top of said fin on a second side of the second transistor gate electrode; wherein the first and second transistor gate electrodes are short circuit connected to each other; and wherein said first transistor is configured to have a first threshold voltage and said second transistor is configured to have a second threshold voltage that is different than the first threshold voltage.