| 主权项 |
1. An organic light emitting display, comprising:
an organic light emitting diode further comprising: an anode metal connected to a transparent electrode of indium tin oxide forming an indium tin oxide layer; a three layer organic diode stack further comprising: electron-transport layer, hole transport layer and the emission layer organized into deep trench high aspect ratio structures in a glass substrate of the organic light emitting display; a first stratum of thin transparent silicon, attached to the organic light emitting diode in the organic light emitting display through a high aspect ratio via; a second stratum of thin transparent silicon, attached to the first stratum and forming driving and addressing transistors for the devices on the first strata; wherein the organic light emitting diode emits light in response to bias voltages existing on the first and second strata; a compensated pixel circuit, further comprising: a silicon-oxide-nitride-oxide-silicon charge-trapping non-volatile memory cell electrically coupled to a trim line and the data line; a first fully-depleted silicon-on-insulator transistor electrically coupled to the scan line and the silicon-oxide-nitride-oxide-silicon charge-trapping non-volatile memory cell; a second fully-depleted silicon-on-insulator transistor electrically coupled to the first fully-depleted silicon-on-insulator and a power supply; a third fully-depleted silicon-on-insulator transistor electrically coupled to the second fully-depleted silicon-on-insulator transistor, the power supply and the organic light emitting diode; wherein each silicon-oxide-nitride-oxide-silicon charge-trapping non-volatile memory cell further comprises a non-volatile memory cell transistor, configured to store two bits per cell and have resistance modulated to introduce an offset in a driver bias current to compensate for manufacturing process variations in the organic light emitting diode. |
