发明名称 Boosting circuit and boosting method
摘要 A boosting circuit includes a boosting capacitor to which an input voltage is applied; a smoothing capacitor to which a boosted voltage is applied; a discharging MOS transistor configured to connect said boosting capacitor and said smoothing capacitor in a discharging operation during a boosting operation period such that charge stored in said boosting capacitor is discharged to said smoothing capacitor; and a charging MOS transistor configured to apply the input voltage to said boosting capacitor in a charging operation during the boosting operation period to charge up said charging capacitor. A back gate of said charging MOS transistor and a back gate of said discharging MOS transistor are connected to a common node, and said common node is connected to different voltages in the charging operation and the discharging operation.
申请公布号 US2009009237(A1) 申请公布日期 2009.01.08
申请号 US20080216487 申请日期 2008.07.07
申请人 NEC ELECTRONICS CORPORATION 发明人 OOTANI KEIGO
分类号 G05F1/46 主分类号 G05F1/46
代理机构 代理人
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