| 摘要 |
PROBLEM TO BE SOLVED: To enhance reliability of a semiconductor device.SOLUTION: A semiconductor device has, on a semiconductor substrate 1P, a pad electrode 9a formed on the uppermost layer of a plurality wiring layers, a surface protective film 10 having an opening 10a on the pad electrode 9a, a rewiring RM formed on a surface protective film 10 and having an upper surface and a side face, a sidewall barrier film 11a consisting of an insulating film for exposing the upper surface of the rewiring RM and covering the side face, and a cap metal film CM covering the upper surface of the rewiring RM. The upper surface and side face of the rewiring RM are covered with the cap metal film CM or sidewall barrier film 11a, and the cap metal film CM and sidewall barrier film 11a have an overlapping part.SELECTED DRAWING: Figure 4 |
