CALCULATING CIRCUIT-LEVEL LEAKAGE USING THREE DIMENSIONAL TECHNOLOGY COMPUTER AIDED DESIGN AND A REDUCED NUMBER OF TRANSISTORS

摘要

A method for calculating leakage of a circuit including a plurality of transistors includes simulating a three-dimensional model of the circuit, wherein the simulating accounts for a subset of the plurality of the transistors that includes less than all of the plurality of transistors, and calculating the leakage in accordance with the three-dimensional model.

主权项

1. A computer readable storage device containing an executable program for calculating leakage of a circuit comprising a plurality of transistors, where the program performs steps comprising:
generating a leakage model of the circuit using a three-dimensional device simulation tool, wherein the only transistors simulated by the leakage model are those of the plurality of transistors that are positioned along a leakage path in the circuit; measuring in the leakage model a leakage across each of the transistors simulated by the leakage model; and calculating the leakage of the circuit by summing the leakage across each transistor simulated by the leakage model, as measured in the leakage model.