| 摘要 |
The objective of the present invention is to provide a producing method of a wafer, capable of effectively producing a wafer from an ingot. The producing method of a wafer for producing a wafer from a hexagonal single crystal ingot comprises: a separation starting point forming step of disposing a condensing point of laser beam of a wavelength having permeability with respect to a hexagonal single crystal ingot on the height corresponding to the thickness of a wafer to be produced from a surface of an ingot, irradiating the laser beam to the surface of the ingot by relatively moving the condensing point and the hexagonal single crystal ingot, and forming a separation starting point by forming a modification layer parallel to the surface and a crack extending along a c surface from the modification layer; and a wafer exfoliation step of immersing the hexagonal single crystal ingot formed with the separation starting point and installed with a protection member on an upper surface thereof in water, and applying ultrasonic vibration to the hexagonal single crystal ingot to exfoliate a plate-shaped article from the hexagonal single crystal ingot. |
