| 发明名称 |
METHOD AND APPARATUS FOR STRESSING A NON-VOLATILE MEMORY |
| 摘要 |
A method and memory for stressing a plurality of non-volatile memory cells is provided. The method includes entering a memory cell stressing mode and providing one or more erase stress pulses to the plurality of non-volatile memory cells; determining that a threshold voltage of at least a subset of the plurality of non-volatile memory cells has a first relationship that is either greater than or less than a first predetermined voltage; providing one or more program stress pulses to the plurality of memory cells; and determining that the threshold voltage of at least a subset of the plurality of memory cells has a second relationship to a second predetermined voltage that is different than the first relationship. |
| 申请公布号 |
US2016247574(A1) |
申请公布日期 |
2016.08.25 |
| 申请号 |
US201514631365 |
申请日期 |
2015.02.25 |
| 申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
HE CHEN;EGUCHI RICHARD K.;MU FUCHEN;SCHMID BENJAMIN A.;SWIFT CRAIG T.;WANG YANZHUO |
| 分类号 |
G11C16/14;G11C16/04 |
主分类号 |
G11C16/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for stressing a plurality of non-volatile memory cells, the method comprising:
entering a memory cell stressing mode; providing one or more erase stress pulses to the plurality of non-volatile memory cells; determining that a threshold voltage of at least a subset of the plurality of non-volatile memory cells has a first relationship that is either greater than or less than a first predetermined voltage, the first predetermined voltage being substantially less than a normal erase verify voltage; providing one or more program stress pulses to the plurality of memory cells; and determining that the threshold voltage of at least a subset of the plurality of memory cells has a second relationship to the first predetermined voltage that is different than the first relationship. |
| 地址 |
AUSTIN TX US |
