| 摘要 |
A method of removing silicon-dioxide from silicon powder. The method comprises: providing a silicon powder defined by each particle having a silicon core and a silicon dioxide layer surrounding the silicon core; dispersing the particles in a dispersing solution; adding an etching solution, wherein the etching solution removes the silicon dioxide layer; adding an organic solvent, thereby producing an organic phase and an aqueous phase, the organic phase comprising the silicon cores and the organic solvent, and the aqueous phase comprising the dispersing solution, the etching solution, and the etching by-products; coating each silicon core with an organic material; draining out the aqueous phase; washing the organic phase, wherein the remaining material from the aqueous phase is removed; and providing the silicon powder as a plurality of silicon cores each absent a silicon dioxide layer and having an organic coating. |
| 主权项 |
1. A method of removing silicon-dioxide from silicon powder, the method comprising:
providing a silicon powder defined by a plurality of particles, each particle in the plurality of particles having a silicon core and a silicon dioxide layer surrounding the silicon core, the silicon core selected from the group consisting of a pure silicon and a silicon alloy; dispersing the plurality of particles in a dispersing solution; adding an etching solution to the dispersing solution, wherein the etching solution removes the silicon dioxide layer from each particle; after the removal of the silicon dioxide by the etching solution, adding an organic solvent to the mixture of the dispersing solution and the etching solution, wherein the addition of the organic solvent produces an organic phase and an aqueous phase, the organic phase comprising substantially all of the silicon cores and substantially all of the organic solvent, and the aqueous phase comprising substantially all of the dispersing solution, substantially all of the etching solution, and substantially all of the by-products resulting from the silicon dioxide removal; coating each silicon core in the plurality of particles with an organic material from the organic solvent; draining out the aqueous phase; washing the organic phase, wherein substantially all of the remaining material from the aqueous phase is removed from the organic phase; drying the coated silicon cores; and re-dispersing the dried and coated silicon cores in a storage liquid; wherein the steps of dispersing, adding an etching solution, adding an organic solvent, coating, draining, and washing are performed in situ with the plurality of particles disposed in liquid, absent any exposure of the silicon cores to air. |
