| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
Semiconductor devices are provided. The semiconductor device includes a first fin portion and a second fin portion arranged on a substrate and extended in a first direction, the first fin portion and the second fin portion being spaced apart from each other in the first direction, a field insulating layer between the first fin portion and the second fin portion and having an upper surface thereof lower than an upper surface of the first fin portion, a first metal gate extended in a second direction on the first fin portion and a silicon gate extended in the second direction on the field insulating layer and contacting the field insulating layer. |
| 申请公布号 |
US2016358913(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201614990951 |
申请日期 |
2016.01.08 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM Ju-Youn |
| 分类号 |
H01L27/088;H01L29/423;H01L29/06;H01L29/49 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first fin portion and a second fin portion arranged on a substrate and extending in a first direction, the first fin portion and the second fin portion being spaced apart from each other in the first direction; a field insulating layer between the first fin portion and the second fin portion and having an upper surface thereof lower than an upper surface of the first fin portion; a first metal gate extending in a second direction on the first fin portion; and a silicon gate extending in the second direction on the field insulating layer and contacting the field insulating layer. |
| 地址 |
Suwon-si KR |
