| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a silicon nitride film formed above a front surface side of a semiconductor substrate, a first wiring formed above the silicon nitride film, a second wiring containing aluminum formed over the first wiring via a first insulating film, a second insulating film having an opening over the second wiring, and aluminum nitride formed over the second wiring at a bottom surface of the opening. |
| 申请公布号 |
US2016358853(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201615238471 |
申请日期 |
2016.08.16 |
| 申请人 |
Renesas Electronics Corporation |
发明人 |
OKUMURA Ayaka;HOTTA Katsuhiko;KONDO Yoshinori;OSAKA Hiroaki |
| 分类号 |
H01L23/522;H01L23/532;H01L27/088;H01L23/528;H01L21/02;H01L23/00 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a silicon nitride film formed above a front surface side of a semiconductor substrate; a first wiring formed above the silicon nitride film; a second wiring containing aluminum formed over the first wiring via a first insulating film; a second insulating film having an opening over the second wiring; and aluminum nitride formed over the second wiring at a bottom surface of the opening. |
| 地址 |
Tokyo JP |
