METHODS FOR SEMICONDUCTOR PASSIVATION BY NITRIDATION AFTER OXIDE REMOVAL

摘要

In some embodiments, a semiconductor surface may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, native oxide is removed from the semiconductor surface and the surface is subsequently nitrided. In some other embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.

主权项

1. A method for integrated circuit fabrication comprising:
removing native oxide from a surface of a semiconductor substrate; and subsequently passivating the surface by exposing the substrate to at least one of hydrazine and a hydrazine derivative.