| 主权项 |
1. A plasma processing apparatus comprising:
a process container that forms a process space to accommodate a target substrate; an exhaust unit connected to an exhaust port of the process container to vacuum-exhaust gas from inside the process container; an exhaust plate interposed between the process space and the exhaust port to rectify a flow of exhaust gas; a first electrode and a second electrode disposed opposite each other within the process container, the first electrode being an upper electrode and the second electrode being a lower electrode and configured to support the target substrate through a mount face; a first RF power application unit configured to apply a first RF power to the first electrode; a second RF power application unit configured to apply a second RF power to the second electrode, the second RF power having a frequency lower than that of the first RF power; a DC power supply configured to apply a DC voltage to the first electrode; a process gas supply unit configured to supply a process gas into the process container; and a conductive member disposed within the process container and grounded to release through plasma a current caused by the DC voltage applied from the DC power supply to the first electrode, the conductive member being disposed as a ring around the first electrode, wherein the first electrode includes outer and inner upper electrodes, which are electrically insulated from each other, disposed on a peripheral side and a central side, respectively, in a radial direction, and connected to the first RF power application unit, to define outer and inner RF discharge regions, respectively, and the DC power supply is connected to at least the inner upper electrode. |
