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发明名称
半导体元件及其制造方法;SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
摘要
一种半导体元件,其包括基底、隔离结构、闸极结构、源极区与汲极区、以及导体层。源极区与汲极区位于基底中。隔离结构位于源极区与汲极区之间。闸极结构位于源极区与隔离结构之间的基底上。导体层位于基底上方,至少自源极区上方延伸至隔离结构上方,且电性连接源极区。基底包括第一区与第二区,在第二区之源极区的轮廓的曲率大于在第一区之源极区的轮廓的曲率,且在第二区上方之覆盖隔离结构的导体层的部分的宽度大于在第一区上方之覆盖隔离结构的导体层的部分的宽度。
申请公布号
TW201530768
申请公布日期
2015.08.01
申请号
TW103103046
申请日期
2014.01.28
申请人
旺宏电子股份有限公司 MACRONIX INTERNATIONAL CO., LTD.
发明人
詹景琳 CHAN, CHING LIN;林正基 LIN, CHENG CHI;连士进 LIEN, SHIH CHIN;吴锡垣 WU, SHYI YUAN
分类号
H01L29/78(2006.01);H01L21/28(2006.01)
主分类号
H01L29/78(2006.01)
代理机构
代理人
詹铭文叶璟宗
主权项
地址
新竹市新竹科学工业园区力行路16号 TW
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