| 摘要 |
A method for forming patterns using a single mask includes: disposing a photo mask having a defined pattern, and performing an exposure process by controlling the focal length of an exposure apparatus to a focusing position to form a pattern having the same shape as the photo mask on the wafer; and using the same photo mask, and performing the exposure process by controlling the focal length of the exposure apparatus to a defocusing position to form a reverse pattern having a reversed image with respect to the pattern on the wafer.
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