发明名称 |
Ceramic Thin Film On Various Substrates, and Process for Producing Same |
摘要 |
The process of Polymer Assisted Chemical Vapor Deposition (PACVD) and the semiconductor, dielectric, passivating or protecting thin films produced by the process are described. A semiconductor thin film of amorphous silicon carbide is obtained through vapor deposition following desublimation of pyrolysis products of polymeric precursors in inert or active atmosphere. PA-CVD allows one or multi-layers compositions, microstructures and thicknesses to be deposited on a wide variety of substrates. The deposited thin film from desublimation is an n-type semiconductor with a low donor concentration in the range of 1014-1017 cm-3. Many devices can be fabricated by the PA-CVD method of the invention such as; solar cells; light-emitting diodes; transistors; photothyristors, as well as integrated monolithic devices on a single chip. Using this novel technique, high deposition rates can be obtained from chemically synchronized Si-C bonds redistribution in organo-polysilanes in the temperature range of about 200-450° C.
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申请公布号 |
US2009008752(A1) |
申请公布日期 |
2009.01.08 |
申请号 |
US20080168435 |
申请日期 |
2008.07.07 |
申请人 |
SIXTRON ADVANCED MATERIALS, INC |
发明人 |
SCARLETE MIHAI;AKTIK CETIN |
分类号 |
H01L23/58;B32B9/04;B32B27/00;C23C16/32;C23C16/46 |
主分类号 |
H01L23/58 |
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