| 摘要 |
PROBLEM TO BE SOLVED: To form an impurity diffused layer where the impurity concentration is uniform on the side of a semiconductor fin in a fin-type transistor. SOLUTION: The fin-type transistor is provided with the fin 10 of a semiconductor erected on a substrate and a source/drain extension region 12 formed on the side of the fin 10. The source/drain extension region 10 is formed by a cluster injection in place of an ordinary ion implantation. COPYRIGHT: (C)2009,JPO&INPIT
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