| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to minimize the area of a support layer around a capacitor bottom electrode of a capacitor and thereby prevent leaning of the capacitor bottom electrode. CONSTITUTION: A manufacturing method of a semiconductor device comprises the steps of: preparing a semiconductor substrate(100) in which a storage node contact plug is formed, forming a first sacrificial insulating layer on the storage node contact plug, etching a part of the first sacrificial insulating layer using a linear mask pattern, forming a support layer(116) on the protruding part of the first sacrificial insulating layer, forming a second sacrificial insulating layer on the support layer and the first sacrificial insulating layer, etching the second and the first sacrificial insulating layer successively, forming a contact hole exposing the storage node contact plug, forming a conductive layer and a third sacrificial insulating layer successively on the contact hole, the support layer and the first sacrificial insulating layer, filling the contact hole, etching the third sacrificial insulating layer and the conductive layer until the first sacrificial insulating layer is exposed the exposure time, and removing the remaining third and the first sacrificial insulating layer.
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