| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device with a high potential retention function that includes a thin-film transistor having stable electric characteristics.SOLUTION: By setting off-current of a thin-film transistor to 1×10A or less by using an oxide semiconductor layer, and by using the thin-film transistor as both a reset transistor and a transfer transistor of a solid-state imaging device, potential of a signal charge storage portion is maintained to be constant, thereby improving a dynamic range. Further, by using a silicon semiconductor capable of manufacturing a complementary metal oxide semiconductor element for a peripheral circuit, a semiconductor device with high speed and low power consumption can be manufactured. |
