| 摘要 |
PROBLEM TO BE SOLVED: To favorably form a fine pattern on a substrate while suppressing decrease in the throughput in a photolithographic process.SOLUTION: A substrate processing system is provided, which includes: a process station 11 for carrying out a process such as resist application, development, heat treatment, or the like; an exposure device 15 for exposing a resist film of a wafer W to EUV light to transfer a pattern; and a post-exposure station 13 that is disposed between the above process station and the exposure device and that has a light irradiation device 102 for carrying out post exposure to UV light on the resist film on the wafer W after the pattern exposure to EUV light is carried out. The inside of the post-exposure station 13 can be adjusted to be under a reduced pressure atmosphere or an inert gas atmosphere; and the post-exposure station is connected to the exposure device 15 via an interface station 14 that can be adjusted to be under a reduced pressure atmosphere or an inert gas atmosphere. |
