| 摘要 |
The present invention relates to a gate insulator film including a solid electrolyte and a thin film transistor including the same. In a gate insulator film which constitutes a thin film transistor, the gate insulator film is formed by mixing a fluorocarbon-based insulation polymer and ionic liquid and, especially, the gate insulator film is formed by mixing P(VDF-HFP) and ionic liquid with P(VDF-TrFE), wherein the P(VDF-HFP) and ionic liquid are mixed with the P(VDF-TrFE) at a volumetric ratio of 99:1 to 98:2. |
