| 摘要 |
Preparation of doped gallium arsenide single crystal, comprises melting gallium arsenide starting material and subsequently making the gallium arsenide melts, where the gallium arsenide melt contains an excess of gallium in comparison with the stoichiometric composition, and the boron concentration in the melt or in the crystal is at least 5x 10 1> 7>cm -> 3>. An independent claim is included for the gallium arsenide single crystal with a charge carrier concentration of at least 1x 10 1> 6>cm -> 3>or 1x 10 1> 5>cm -> 3>and a maximum of 1x 10 1> 8>cm -> 3>and an optical absorption coefficient of 2.5 or 2 cm -> 1>at a wavelength of 1000 nm, more than 1.8 or 1.4 cm -> 1>at a wavelength of 1100 nm and a maximum of 0.8 or 1 cm -> 1>at a wavelength of 1200 nm. |
