Self-bootstrapping word-line driver circuit and method

摘要

Aspects for self bootstrapping word-line driver circuitry are provided. In a circuit aspect, a word-line driver circuit for a memory cell in a semiconductor memory includes a signal input means, the signal input means comprising a first plurality of transistors, the first plurality of transistors receiving an input voltage signal higher than a voltage supply signal of the semiconductor memory. The circuit further includes a signal output means, the signal output means comprising a second plurality of transistors coupled to the first plurality of transistors and providing an output drive signal sufficient for the memory cell. In a method aspect, a method for providing proper voltage level output of a word-line driver circuit for a semiconductor memory includes forming a self-bootstrap circuit as the word-line driver circuit and providing an input voltage signal to the self-bootstrap circuit, the input voltage signal acting as a source voltage for the circuit and being higher by a predetermined value than a supply voltage of the semiconductor memory.