发明名称 Dicing tape thermal management by wafer frame support ring cooling during plasma dicing
摘要 Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves introducing a substrate supported by a substrate carrier into a plasma etch chamber. The substrate has a patterned mask thereon covering integrated circuits and exposing streets of the substrate. The substrate carrier has a backside. The method also involves supporting at least a portion of the backside of the substrate carrier on a chuck of the plasma etch chamber. The method also involves cooling substantially all of the backside of the substrate carrier, the cooling involving cooling at least a first portion of the backside of the substrate carrier by the chuck. The method also involves plasma etching the substrate through the streets to singulate the integrated circuits while performing the cooling substantially all of the backside of the substrate carrier.
申请公布号 US9112050(B1) 申请公布日期 2015.08.18
申请号 US201414276683 申请日期 2014.05.13
申请人 Applied Materials, Inc. 发明人 Lei Wei-Sheng;Kumar Prabhat;Eaton Brad;Kumar Ajay
分类号 H01L21/00;H01L21/82;H01L21/3065;H01L21/67;H01L21/78 主分类号 H01L21/00
代理机构 Blakely Sokoloff Taylor Zafman LLP 代理人 Blakely Sokoloff Taylor Zafman LLP
主权项 1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising: introducing a substrate supported by a substrate carrier into a plasma etch chamber, the substrate having a patterned mask thereon covering integrated circuits and exposing streets of the substrate, and the substrate carrier having a backside, wherein the substrate carrier comprises an outer tape frame and supporting dicing tape, and wherein the outer tape frame is thermally conductive; supporting at least a portion of the backside of the substrate carrier on a chuck of the plasma etch chamber; cooling substantially all of the backside of the substrate carrier, the cooling comprising cooling at least a first portion of the backside of the substrate carrier by the chuck, wherein cooling substantially all of the backside of the substrate carrier comprises cooling the tape frame and the substrate; and plasma etching the substrate through the streets to singulate the integrated circuits while performing the cooling substantially all of the backside of the substrate carrier; and wherein cooling substantially all of the backside of the substrate carrier, further comprises cooling the tape frame of the backside of the substrate carrier with a cooling concentric chuck ring surrounding the chuck.
地址 Santa Clara CA US