| 摘要 |
PROBLEM TO BE SOLVED: To suppress the leakage of a gas from a treating chamber without tightly closing the treating chamber, to perform treatment of high in-plane uniformity to a substrate, and to suppress the sticking of particles to the substrate further. SOLUTION: On the side of the opening 41 of a flat treating chamber 4, a gas discharge part 6 for forming air flow in the entire area of a wafer surface is provided, and a suction and exhaust port 71 formed along a lateral direction is provided so as to face the gas discharge part 6 holding the wafer there between. Since the air flow flowing from the side of the opening 41 to the side of the suction and exhaust port 71 is formed inside the treating chamber 4 and is exhausted through the suction and exhaust port 71, the leakage of the gas from the treating chamber 4 is suppressed. Also, since a treatment gas is supplied from the side part of the wafer, the supply of the treatment gas by a strong pressure locally to the wafer surface is suppressed, the treatment of the high in-plane uniformity is performed, and the sticking of particles to the wafer is suppressed. COPYRIGHT: (C)2009,JPO&INPIT
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