| 摘要 |
A protective layer for filling a gap without damage is provided to improve uniformity of a gap filling by preventing damage to a specific part positioned in a bottom part of a gap having a high aspect ratio and a narrow width. A high density region(126) includes two gaps(110) and a structure(102). An isolated features region(128) includes a gap(112) and a structure(118). The gap comprises a bottom part(104), a side wall(106), and an entry region(108). The gap is lined by a silicon oxide layer(114) grown by a heat. The silicon oxide layer is formed in the bottom part and the side wall of the gap. The silicon oxide is used in order to passivate a silicon surface of the structure. The silicon oxide provides an electrically stable boundary part between the silicon and a gap filling material.
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