| 摘要 |
PURPOSE: A high voltage pumping circuit of a semiconductor device is provided to improve pumping driving capability of a memory cell by generating quadruple high voltage from relatively-low power voltage. CONSTITUTION: A pumping unit(35) generates high voltage by pumping a signal. A switching element transfers the signal pumped in the pumping unit. A control signal generating unit(40) controls a driving operation of the switching element by generating a signal having a level higher than the pumped signal. Each pumping output control unit includes the control signal generating unit. The pumping unit comprises pre-charge units(20,22,24,30) for pre-charging a signal, and a swing width control unit for controlling a swing width of a pumping signal. The signal pre-charged by the pre-charge unit is pumped by the swing width control unit. The pumped signal is delivered through the switching element.
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