Method of making a semiconductor device having a voltage withstanding PMOSFET semiconductor structure and an NMOSFET semiconductor structure

摘要

The method involves producing an N-doped well in a P-doped semiconductor substrate by high-voltage ion implantation. An N-doped channel region between a P-doped source region and a P-doped drain region, is produced in a P-doped inner zone of the N-doped well. The regions are arranged such that the P-doped inner zone of the N-doped well remains as a drift zone between the channel and drain regions.