| 摘要 |
In a semiconductor laser having an active layer of double-quantum-well structure that includes two InGaN well layers each of which has a thickness of 5 nm, a threshold current deteriorates to a relatively small degree while differential efficiency is improved considerably in a region having a light confinement coefficient Gamma of 3.0% or less. On the other hand, with the light confinement coefficient Gamma becoming less than 1.5%, the threshold current increases considerably while the amount of improvement in differential efficiency becomes small. It is therefore preferable that the lowest limit to the light confinement coefficient Gamma be about 1.5%. The differential efficiency of 1.6 W/A or more is obtained with the light confinement coefficient Gamma being 3.0% or less, and the differential efficiency of 1.7 W/A or more is obtained with the light confinement coefficient Gamma being 2.6% or less.
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