NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nonvolatile memory device and a manufacturing method thereof are provided to improve an electrical reliability of the device itself by forming an interface free barrier pattern using a radical nitridation. A nonvolatile memory device includes a substrate(100) with a channel region(10), a barrier pattern, a trapping pattern, a blocking pattern, and a gate electrode pattern. The barrier pattern(20) is formed on the channel region of the substrate. The barrier pattern is composed of an upper portion(22) made of a silicon nitride layer and a lower portion(21) made of a silicon oxide layer. The barrier pattern is formed by using a radical nitridation. The trapping pattern(30) is formed on the barrier pattern. The trapping pattern contains silicon nitride. The blocking pattern(40) is formed on the trapping pattern. The gate electrode pattern(50) is formed on the blocking pattern.